SiGe channel p-MOSFETs scaling-down

Abstract

We present an in-depth experimental study of the transport in sub-100 nm Si/sub 0.85/Ge/sub 0.15/ p-MOSFETs. Using a novel capacitive method, we have extracted the effective channel length for gate lengths down to 50 nm. We show experimentally that the performance of short channel SiGe devices are limited by the low-field transport regime.