JOURNAL ARTICLE

Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation

Philippe Dollfus

Year: 1997 Journal:   Thin Solid Films Vol: 294 (1-2)Pages: 259-262   Publisher: Elsevier BV
Keywords:
Transconductance Monte Carlo method Materials science Heterojunction MOSFET Subthreshold conduction Saturation (graph theory) Optoelectronics Scattering Drain-induced barrier lowering Channel (broadcasting) Mole fraction Threshold voltage Condensed matter physics Transistor Electrical engineering Physics Voltage Optics Engineering Thermodynamics Mathematics

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Semiconductor materials and devices
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Advancements in Semiconductor Devices and Circuit Design
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Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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