JOURNAL ARTICLE
Study of uniform and graded SiGe channel heterojunction p-MOSFETs using Monte Carlo simulation
Year: 1997 Journal: Thin Solid Films Vol: 294 (1-2)Pages: 259-262 Publisher: Elsevier BV
Keywords:
Transconductance Monte Carlo method Materials science Heterojunction MOSFET Subthreshold conduction Saturation (graph theory) Optoelectronics Scattering Drain-induced barrier lowering Channel (broadcasting) Mole fraction Threshold voltage Condensed matter physics Transistor Electrical engineering Physics Voltage Optics Engineering Thermodynamics Mathematics
Metrics
2
Cited By
0.46
FWCI (Field Weighted Citation Impact)
0
Refs
0.63
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
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