Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

Hock-Chun Chin; Ming Zhu; Xinke Liu; Hock-Koon Lee; Luping Shi; Leng-Seow Tan; Yee‐Chia Yeo

doi:10.1109/led.2008.2010831

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Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

Hock-Chun Chin Ming Zhu Xinke Liu Hock-Koon Lee Luping Shi Leng-Seow Tan Yee‐Chia Yeo

Year: 2009 Journal: IEEE Electron Device Letters Vol: 30 (2)Pages: 110-112 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/led.2008.2010831

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Abstract

10.1109/LED.2008.2010831

Keywords:

Passivation Materials science Nanotechnology Layer (electronics)

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silane–Ammonia Surface Passivation for Gallium Arsenide Surface-Channel n-MOSFETs

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