JOURNAL ARTICLE

Surface properties of n-type gallium arsenide

I. Flinn

Year: 1968 Journal:   Surface Science Vol: 10 (1)Pages: 32-57   Publisher: Elsevier BV
Keywords:
Depletion region Surface photovoltage Gallium arsenide Chemistry Surface (topology) Analytical Chemistry (journal) Materials science Molecular physics Semiconductor Optoelectronics Physics

Metrics

24
Cited By
6.51
FWCI (Field Weighted Citation Impact)
16
Refs
0.97
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Silicon and Solar Cell Technologies
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

Related Documents

JOURNAL ARTICLE

Surface measurements on N-type gallium arsenide

I. FlinnD. C. Emmony

Journal:   Physics Letters Year: 1963 Vol: 6 (2)Pages: 133-135
JOURNAL ARTICLE

Electrical Properties of n‐Type Epitaxial Gallium Arsenide

D.V. Eddolls

Journal:   physica status solidi (b) Year: 1966 Vol: 17 (1)Pages: 67-76
JOURNAL ARTICLE

Absorption of n-type gallium arsenide

A. N. VeisYu. I. Ukhanov

Journal:   Russian Physics Journal Year: 1970 Vol: 13 (7)Pages: 924-926
JOURNAL ARTICLE

Defect Levels in n-Type Gallium Arsenide and Gallium Aluminum Arsenide Layers

A. K. Saxena

Journal:   physica status solidi (a) Year: 2001 Vol: 183 (2)Pages: 281-297
© 2026 ScienceGate Book Chapters — All rights reserved.