JOURNAL ARTICLE

Surface measurements on N-type gallium arsenide

I. FlinnD. C. Emmony

Year: 1963 Journal:   Physics Letters Vol: 6 (2)Pages: 133-135   Publisher: Elsevier BV
Keywords:
Surface photovoltage Spectroscopy Semiconductor Heterojunction Gallium arsenide Surface states Physics Optoelectronics Surface (topology) Materials science

Metrics

6
Cited By
1.20
FWCI (Field Weighted Citation Impact)
4
Refs
0.81
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Topics

Advanced Semiconductor Detectors and Materials
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics

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