N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

Hock-Chun Chin; Ming Zhu; Keat-Mun Hoe; Ganesh S. Samudra; Yee‐Chia Yeo

doi:10.7567/ssdm.2007.g-7-2

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N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

Hock-Chun Chin Ming Zhu Keat-Mun Hoe Ganesh S. Samudra Yee‐Chia Yeo

Year: 2007

DOI: 10.7567/ssdm.2007.g-7-2

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Keywords:

Gallium arsenide Materials science Germanium Optoelectronics Channel (broadcasting) Palladium Gallium Silicon Electrical engineering Metallurgy Engineering Chemistry

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Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

N-channel MOSFETs with In-situ Silane-Passivated Gallium Arsenide Channel and CMOS-Compatible Palladium-Germanium Contacts

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