High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

B. Claflin; K. Flock; G. Lucovsky

doi:10.1557/proc-567-603

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High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

B. Claflin K. Flock G. Lucovsky

Year: 1999 Journal: MRS Proceedings Vol: 567 Publisher: Cambridge University Press

DOI: 10.1557/proc-567-603

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Keywords:

Materials science Metal gate Optoelectronics High-κ dielectric CMOS Gate dielectric Dielectric Nitride Capacitor Tin Metal Annealing (glass) Tantalum nitride Capacitance Electrode Gate oxide Electrical engineering Nanotechnology Voltage Transistor Metallurgy

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

High-k Dielectrics and Dual Metal Gates: Integration Issues for New CMOS Materials

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