High-K materials and metal gates for CMOS applications

John Robertson; Robert M. Wallace

doi:10.1016/j.mser.2014.11.001

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High-K materials and metal gates for CMOS applications

John Robertson Robert M. Wallace

Year: 2014 Journal: Materials Science and Engineering R Reports Vol: 88 Pages: 1-41 Publisher: Elsevier BV

DOI: 10.1016/j.mser.2014.11.001

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Keywords:

Materials science Metal gate Gate oxide Gate dielectric Optoelectronics High-κ dielectric Equivalent oxide thickness Time-dependent gate oxide breakdown CMOS Transistor Oxide Polycrystalline silicon Dielectric Threshold voltage Electronic engineering Nanotechnology Thin-film transistor Electrical engineering Layer (electronics) Metallurgy Voltage

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

High-K materials and metal gates for CMOS applications

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