New High-K Materials for CMOS Applications

John Robertson

doi:10.1016/b978-0-44-453153-7.00120-6

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New High-K Materials for CMOS Applications

John Robertson

Year: 2011 Elsevier eBooks Pages: 132-176 Publisher: Elsevier BV

DOI: 10.1016/b978-0-44-453153-7.00120-6

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Keywords:

High-κ dielectric Materials science Metal gate Hafnium Optoelectronics Gate dielectric Gate oxide Dielectric Oxide Silicon Transistor Work function CMOS Leakage (economics) Equivalent oxide thickness Electronic engineering Layer (electronics) Nanotechnology Electrical engineering Metallurgy

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Topics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Integrated Circuits and Semiconductor Failure Analysis

Physical Sciences → Engineering → Electrical and Electronic Engineering

New High-K Materials for CMOS Applications

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