JOURNAL ARTICLE

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Mantu K. HudaitS. B. Krupanidhi

Year: 1999 Journal:   Solid-State Electronics Vol: 43 (12)Pages: 2135-2139   Publisher: Elsevier BV
Keywords:
Schottky diode Doping Breakdown voltage Epitaxy Materials science Metalorganic vapour phase epitaxy Optoelectronics Bipolar junction transistor Diode Common emitter Analytical Chemistry (journal) Voltage Condensed matter physics Transistor Layer (electronics) Chemistry Electrical engineering Physics Nanotechnology

Metrics

6
Cited By
0.21
FWCI (Field Weighted Citation Impact)
29
Refs
0.53
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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