Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Mantu K. Hudait; S. B. Krupanidhi

doi:10.1016/s0038-1101(99)00194-x

ScienceGate Book Chapters

JOURNAL ARTICLE

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Mantu K. Hudait S. B. Krupanidhi

Year: 1999 Journal: Solid-State Electronics Vol: 43 (12)Pages: 2135-2139 Publisher: Elsevier BV

DOI: 10.1016/s0038-1101(99)00194-x

Get Full-Text PDF Get Analytical Report

Keywords:

Schottky diode Doping Breakdown voltage Epitaxy Materials science Metalorganic vapour phase epitaxy Optoelectronics Bipolar junction transistor Diode Common emitter Analytical Chemistry (journal) Voltage Condensed matter physics Transistor Layer (electronics) Chemistry Electrical engineering Physics Nanotechnology

Metrics

Cited By

0.21

FWCI (Field Weighted Citation Impact)

Refs

0.53

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Advancements in Semiconductor Devices and Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Breakdown characteristics of MOVPE grown Si-doped GaAs Schottky diodes

Metrics

Citation History

Topics

Related Documents

Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

Improved Schottky gate characteristics for MOVPE-grown GaAs MESFETs

Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs

Doped InGaP grown by MOVPE on GaAs

Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE