JOURNAL ARTICLE

Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

M. HeukenL. HöpkenB. Opitz

Year: 1993 Journal:   Solid-State Electronics Vol: 36 (5)Pages: 761-766   Publisher: Elsevier BV
Keywords:
Metalorganic vapour phase epitaxy Materials science Schottky diode Schottky barrier Doping Acceptor Diode Optoelectronics Fermi level Band gap Analytical Chemistry (journal) Layer (electronics) Chemistry Epitaxy Condensed matter physics Electron Nanotechnology Physics

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Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and interfaces
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Chalcogenide Semiconductor Thin Films
Physical Sciences →  Engineering →  Electrical and Electronic Engineering

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