Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

M. Heuken; L. Höpken; B. Opitz

doi:10.1016/0038-1101(93)90247-n

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Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

M. Heuken L. Höpken B. Opitz

Year: 1993 Journal: Solid-State Electronics Vol: 36 (5)Pages: 761-766 Publisher: Elsevier BV

DOI: 10.1016/0038-1101(93)90247-n

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Keywords:

Metalorganic vapour phase epitaxy Materials science Schottky diode Schottky barrier Doping Acceptor Diode Optoelectronics Fermi level Band gap Analytical Chemistry (journal) Layer (electronics) Chemistry Epitaxy Condensed matter physics Electron Nanotechnology Physics

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and interfaces

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Chalcogenide Semiconductor Thin Films

Physical Sciences → Engineering → Electrical and Electronic Engineering

Characterization of MOVPE grown ZnSe on GaAs using Schottky-diodes

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