Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE

M. Druminski; H. D. Wolf; K.‐H. Zschauer; K. Wittmaack

doi:10.1016/0022-0248(82)90486-9

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Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE

M. Druminski H. D. Wolf K.‐H. Zschauer K. Wittmaack

Year: 1982 Journal: Journal of Crystal Growth Vol: 57 (2)Pages: 318-324 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(82)90486-9

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Keywords:

Metalorganic vapour phase epitaxy Epitaxy Photoluminescence Doping Mole fraction Analytical Chemistry (journal) Hall effect Materials science Silicon Silane Band gap Chemistry Electrical resistivity and conductivity Optoelectronics Nanotechnology Physical chemistry Physics Layer (electronics)

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPE

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