JOURNAL ARTICLE
Improved Schottky Gate Characteristics for MOVPE-Grown GaAs MESFETs
M.A. TischlerD.C. La TulipeT.F. KuechJ.H. MagerleinH.J. Hovel
Year: 2005 Journal: Sixth International Conference Metalorganic Vapor Phase Epitaxy Pages: 167-168
Keywords:
Metalorganic vapour phase epitaxy Optoelectronics Gallium arsenide Materials science Schottky diode MESFET Epitaxy Electrical engineering Transistor Field-effect transistor Nanotechnology Engineering Voltage
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Topics
Semiconductor materials and interfaces
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
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