Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport

Г. Позина; Peder Bergman; Bo Monemar; Motoaki Iwaya; Shugo Nitta; Hiroshi Amano; Isamu Akasaki

doi:10.4028/www.scientific.net/msf.353-356.791

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Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport

Г. Позина Peder Bergman Bo Monemar Motoaki Iwaya Shugo Nitta Hiroshi Amano Isamu Akasaki

Year: 2001 Journal: Materials science forum Vol: 353-356 Pages: 791-794 Publisher: Trans Tech Publications

DOI: 10.4028/www.scientific.net/msf.353-356.791

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Abstract

We present an optical study of an In0.12Ga0.88N/GaN structure containing three quantum wells (QW) grown by metalorganic vapor phase epitaxy using mass transport. The mass-transport regions demonstr ...

Keywords:

Materials science Mass transport Luminescence Optoelectronics Quantum well Gallium nitride Engineering physics Nanotechnology Optics Physics Laser Layer (electronics)

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Luminescence of InGaN/GaN Multiple Quantum Wells Grown by Mass-Transport

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