JOURNAL ARTICLE

Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

Keywords:
Metalorganic vapour phase epitaxy Optoelectronics Materials science Chemical vapor deposition Electroluminescence Sapphire Quantum well Layer (electronics) Cathodoluminescence Luminescence Photoluminescence Substrate (aquarium) Light-emitting diode Blueshift Barrier layer Epitaxy Nanotechnology Laser Optics

Metrics

16
Cited By
1.50
FWCI (Field Weighted Citation Impact)
18
Refs
0.84
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

GaN-based semiconductor devices and materials
Physical Sciences →  Physics and Astronomy →  Condensed Matter Physics
Metal and Thin Film Mechanics
Physical Sciences →  Engineering →  Mechanics of Materials
Ga2O3 and related materials
Physical Sciences →  Materials Science →  Electronic, Optical and Magnetic Materials
© 2026 ScienceGate Book Chapters — All rights reserved.