Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

Xiaowei Wang; Feng Liang; Degang Zhao; Desheng Jiang; Zongshun Liu; Jianjun Zhu; Jing Yang; Wenjie Wang

doi:10.1016/j.jallcom.2019.03.180

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Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

Xiaowei Wang Feng Liang Degang Zhao Desheng Jiang Zongshun Liu Jianjun Zhu Jing Yang Wenjie Wang

Year: 2019 Journal: Journal of Alloys and Compounds Vol: 790 Pages: 197-202 Publisher: Elsevier BV

DOI: 10.1016/j.jallcom.2019.03.180

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Keywords:

Metalorganic vapour phase epitaxy Optoelectronics Materials science Chemical vapor deposition Electroluminescence Sapphire Quantum well Layer (electronics) Cathodoluminescence Luminescence Photoluminescence Substrate (aquarium) Light-emitting diode Blueshift Barrier layer Epitaxy Nanotechnology Laser Optics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Effect of dual-temperature-grown InGaN/GaN multiple quantum wells on luminescence characteristics

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