Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon

G.M. Wu; Chia-Sui Hung

doi:10.1364/fio.2005.jwa67

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JOURNAL ARTICLE

Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon

G.M. Wu Chia-Sui Hung

Year: 2005 Journal: Frontiers in Optics Pages: JWA67-JWA67 Publisher: Optica Publishing Group

DOI: 10.1364/fio.2005.jwa67

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Abstract

In this paper, we discuss the photo-luminescence properties of various InGaN/GaN multiple quantum wells grown on silicon substrate using metal-organic chemical vapor deposition. The 20K PL spectra suggest the quantization effect and In-rich phenomenon.

Keywords:

Chemical vapor deposition Luminescence Quantum well Materials science Optoelectronics Silicon Photoluminescence Quantization (signal processing) Substrate (aquarium) Wide-bandgap semiconductor Optics Laser Physics Computer science

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Photo-luminescence in InGaN/GaN Multiple Quantum Wells Grown on Silicon

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