Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

Г. Позина; J. P. Bergman; B. Ḿonemar; Motoaki Iwaya; Shugo Nitta; Hiroshi Amano; Isamu Akasaki

doi:10.1016/s0022-0248(01)01257-x

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Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

Г. Позина J. P. Bergman B. Ḿonemar Motoaki Iwaya Shugo Nitta Hiroshi Amano Isamu Akasaki

Year: 2001 Journal: Journal of Crystal Growth Vol: 230 (3-4)Pages: 473-476 Publisher: Elsevier BV

DOI: 10.1016/s0022-0248(01)01257-x

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Keywords:

Photoluminescence Quantum well Epitaxy Dislocation Excitation Photoluminescence excitation Condensed matter physics Line (geometry) Materials science Chemistry Optoelectronics Molecular physics Physics Optics Laser Nanotechnology Geometry

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Photoluminescence of InGaN/GaN multiple quantum wells grown by mass transport

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