Phonon-Assisted Photoluminescence in InGaN/GaN Multiple Quantum Wells

Abstract

The LO-phonon sidebands of the photoluminescence in InGaN/GaN multiple quantum wells has been investigated in the temperature range from 20 to 300 K. Analysing the intensity distribution among the phonon replicas, the strength of the exciton–phonon interaction has been estimated. The Huang–Rhys factor was found to be ≈0.3, much larger than in GaN. The enhancement has been attributed to the exciton localization on a length scale smaller than the exciton Bohr radius and to the large internal electric field, which increases the spatial separation of the electron and hole charge densities along the growth axis.