Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

J. Allègre; Pierre Lefèbvre; Sandrine Juillaguet; W. Knap; J. Camassel; Q. Chen; M. Asif Khan

doi:10.1557/s1092578300001605

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Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

J. Allègre Pierre Lefèbvre Sandrine Juillaguet W. Knap J. Camassel Q. Chen M. Asif Khan

Year: 1997 Journal: MRS Internet Journal of Nitride Semiconductor Research Vol: 2 Publisher: Cambridge University Press

DOI: 10.1557/s1092578300001605

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Keywords:

Materials science Photoluminescence Indium Sapphire Metalorganic vapour phase epitaxy Optoelectronics Laser Quantum well Excited state Atmospheric temperature range Wavelength Indium nitride Luminescence Blue laser Blueshift Substrate (aquarium) Gallium nitride Optics Atomic physics Epitaxy Physics Nanotechnology

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Time-resolved photoluminescence studies of InGaN/GaN multiple quantum wells

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