Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

F. Ren; Changzheng Sun; Yanjun Han; Zhibiao Hao; Yi Luo

doi:10.1109/inow.2007.4302968

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Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

F. Ren Changzheng Sun Yanjun Han Zhibiao Hao Yi Luo

Year: 2007 Pages: 234-235

DOI: 10.1109/inow.2007.4302968

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Abstract

Steady state and time-resolved photoluminescence (TRPL) of InGaN/GaN quantum well (QW) samples grown by MOCVD is investigated. The carrier competition between QW peak and yellow band can be generally explained by the effect of indium concentration in InGaN/GaN QWs.

Keywords:

Photoluminescence Quantum well Optoelectronics Indium Materials science Indium gallium nitride Metalorganic vapour phase epitaxy Wide-bandgap semiconductor Gallium nitride Characterization (materials science) Epitaxy Optics Laser Nanotechnology Physics

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Time-resolved Photoluminescence Characterization of InGaN/GaN Quantum Wells

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