Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

Tao Lin; Zhi Ren Qiu; Jer‐Ren Yang; Long Ding; Yihua Gao; Zhe Chuan Feng

doi:10.1016/j.matlet.2016.03.010

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Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

Tao Lin Zhi Ren Qiu Jer‐Ren Yang Long Ding Yihua Gao Zhe Chuan Feng

Year: 2016 Journal: Materials Letters Vol: 173 Pages: 170-173 Publisher: Elsevier BV

DOI: 10.1016/j.matlet.2016.03.010

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Keywords:

Photoluminescence Materials science Exciton Quantum well Indium Optoelectronics Spontaneous emission Light-emitting diode Gallium nitride Radiative transfer Indium gallium nitride Diode Condensed matter physics Optics Nanotechnology Physics Laser

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GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Ga2O3 and related materials

Physical Sciences → Materials Science → Electronic, Optical and Magnetic Materials

Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

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