Laser-induced trench etching of GaAs in aqueous KOH solution

Cheon Lee; Mikio Takai; Toshiro Yada; Kazuo Kato; Susumu Namba

doi:10.1007/bf00324316

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Laser-induced trench etching of GaAs in aqueous KOH solution

Cheon Lee Mikio Takai Toshiro Yada Kazuo Kato Susumu Namba

Year: 1990 Journal: Applied Physics A Vol: 51 (4)Pages: 340-343 Publisher: Springer Science+Business Media

DOI: 10.1007/bf00324316

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Keywords:

Materials science Etching (microfabrication) Trench Microprobe Raman spectroscopy Laser Auger electron spectroscopy Aqueous solution Photoluminescence Irradiation Dry etching Optoelectronics Scanning electron microscope Reactive-ion etching Raman scattering Isotropic etching Analytical Chemistry (journal) Optics Nanotechnology Composite material Mineralogy Chemistry

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Laser Material Processing Techniques

Physical Sciences → Engineering → Computational Mechanics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Laser-induced trench etching of GaAs in aqueous KOH solution

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