Laser-induced microscopic etching of GaAs and InP

D. J. Ehrlich; Richard M. Osgood; Thomas F. Deutsch

doi:10.1063/1.91597

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Laser-induced microscopic etching of GaAs and InP

D. J. Ehrlich Richard M. Osgood Thomas F. Deutsch

Year: 1980 Journal: Applied Physics Letters Vol: 36 (8)Pages: 698-700 Publisher: American Institute of Physics

DOI: 10.1063/1.91597

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Abstract

Ultraviolet laser photolysis of methyl-halides has been used to produce localized photoetching of GaAs and InP. A spatial resolution of ≃1μm has been achieved and an etch rate ≳104 times that of the dark reaction demonstrated. A chemical mechanism is proposed and the observed resolution is explained by a simple physical model.

Keywords:

Photodissociation Laser Halide Etching (microfabrication) Ultraviolet Gallium arsenide Resolution (logic) Optoelectronics Materials science Isotropic etching Chemistry Analytical Chemistry (journal) Optics Photochemistry Inorganic chemistry Nanotechnology Physics

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Laser-Matter Interactions and Applications

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Laser Material Processing Techniques

Physical Sciences → Engineering → Computational Mechanics

Photonic and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Laser-induced microscopic etching of GaAs and InP

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