Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias

B. Boratyński; S.V. Jaskolski

doi:10.1007/bf02654966

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Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias

B. Boratyński S.V. Jaskolski

Year: 1983 Journal: Journal of Electronic Materials Vol: 12 (6)Pages: 947-958 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02654966

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Keywords:

Glow discharge Schottky barrier Materials science Schottky diode Amorphous silicon Silicon Amorphous solid Substrate (aquarium) Optoelectronics Electrode Solid-state physics Infrared spectroscopy Analytical Chemistry (journal) Chemistry Plasma Crystalline silicon Crystallography

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Schottky barriers fabricated on glow discharge A-Si:H films deposited under bias

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