Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films

A. M. Antoine; B. Drévillon; Pere Roca; I. Cabarrocas

doi:10.1016/0022-3093(85)90773-2

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Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films

A. M. Antoine B. Drévillon Pere Roca I. Cabarrocas

Year: 1985 Journal: Journal of Non-Crystalline Solids Vol: 77-78 Pages: 769-772 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(85)90773-2

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Keywords:

Torr Glow discharge Materials science Analytical Chemistry (journal) Deposition (geology) Ellipsometry Ion Homogeneous Thin film Plasma Chemistry Nanotechnology

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Growth processes of RF glow discharge deposited a-Si:H and a-Ge:H films

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