Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H

G. Lucovsky; S. S. Chao; J. Yang; John E. Tyler; W. Czubatyj

doi:10.1016/0022-3093(84)90305-3

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Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H

G. Lucovsky S. S. Chao J. Yang John E. Tyler W. Czubatyj

Year: 1984 Journal: Journal of Non-Crystalline Solids Vol: 66 (1-2)Pages: 99-104 Publisher: Elsevier BV

DOI: 10.1016/0022-3093(84)90305-3

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Keywords:

Glow discharge Alloy Oxygen Materials science Plasma Analytical Chemistry (journal) Infrared spectroscopy Absorption (acoustics) Absorption spectroscopy Phase (matter) Chemistry Metallurgy Organic chemistry Composite material Optics Physics

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Differences between the bonding of oxygen in glow discharge deposited a-Si:H and a-Ge:H

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