JOURNAL ARTICLE
Photoconverters based on GaAs/Ge heterostructures grown by low-temperature liquid phase epitaxy
В. П. ХвостиковЛ. С. ЛунинV. I. RatushnyiEduard OlivaM. Z. ShvartsО. А. Хвостикова
Year: 2003 Journal: Technical Physics Letters Vol: 29 (7)Pages: 592-593 Publisher: Pleiades Publishing
Abstract
A low-temperature liquid phase epitaxy technique involving rapid cooling of a solution melt has been developed for the growth of epitaxial GaAs films on germanium substrates. Using this method, it is possible to obtain high-quality submicron GaAs epilayers on Ge substrates for photoelectric converters.
Keywords:
Epitaxy Materials science Heterojunction Germanium Liquid phase Optoelectronics Photoelectric effect Phase (matter) Nanotechnology Silicon Chemistry Physics
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
solar cell performance optimization
Physical Sciences → Engineering → Electrical and Electronic Engineering
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