EFFICIENT PHOTOEMISSION FROM Ge-DOPED GaAs GROWN BY LIQUID-PHASE EPITAXY

Abstract

Efficient photoemission with white light sensitivities as high as 1100 μA/lm has been obtained from Ge-doped GaAs layers grown by liquid-phase epitaxy. The hole concentrations of the samples were relatively low (5×1017–2×1018 cm−3), and the sample surfaces were chemically polished prior to cesium-oxygen activation. Quantum yield data show an unusually high infrared response and suggest long diffusion lengths, between 2 and 7 μ, for the photo-excited Γ-electrons.