JOURNAL ARTICLE
Photoluminescence of Ge-doped GaAs grown by vapor-phase epitaxy
Year: 1969 Journal: Solid State Communications Vol: 7 (12)Pages: viii-viii Publisher: Elsevier BV
Keywords:
Photoluminescence Epitaxy Doping Vapor phase Materials science Optoelectronics Nanotechnology Physics
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Topics
Semiconductor Quantum Structures and Devices
Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics
Photonic and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
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