Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Mantu K. Hudait; S. B. Krupanidhi

doi:10.1016/s0025-5408(00)00191-4

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Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

Mantu K. Hudait S. B. Krupanidhi

Year: 2000 Journal: Materials Research Bulletin Vol: 35 (1)Pages: 125-133 Publisher: Elsevier BV

DOI: 10.1016/s0025-5408(00)00191-4

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Keywords:

Heterojunction Epitaxy Materials science Transmission electron microscopy Metalorganic vapour phase epitaxy High-resolution transmission electron microscopy Optoelectronics Analytical Chemistry (journal) Crystallography Nanotechnology Chemistry

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

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Transmission electron microscopic study of GaAs/Ge heterostructures grown by low-pressure metal organic vapor phase epitaxy

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