Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

V. M. Andreev; A. B. Kazantsev; В. П. Хвостиков; E.V. Paleeva; V.D. Rumyantsev; S. V. Sorokina

doi:10.1016/0254-0584(96)80090-3

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Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

V. M. Andreev A. B. Kazantsev В. П. Хвостиков E.V. Paleeva V.D. Rumyantsev S. V. Sorokina

Year: 1996 Journal: Materials Chemistry and Physics Vol: 45 (2)Pages: 130-135 Publisher: Elsevier BV

DOI: 10.1016/0254-0584(96)80090-3

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Keywords:

Heterojunction Epitaxy Materials science Optoelectronics Liquid phase Crystallization Quantum efficiency Phase (matter) Quantum well Nanotechnology Optics Chemistry Layer (electronics) Laser

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Nanowire Synthesis and Applications

Physical Sciences → Engineering → Biomedical Engineering

Quantum-well AlGaAs heterostructures grown by low-temperature liquid-phase epitaxy

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