AlGaAs/GaAs quantum well heterostructures grown by the low temperature LPE technique

P. Díaz‐Arencibia; G. Torres‐Delgado; J. G. Mendoza-Álvarez; T. Prutskij; F. Chavez-Ramírez; E. Silva-Andrade

doi:10.1063/1.51203

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AlGaAs/GaAs quantum well heterostructures grown by the low temperature LPE technique

P. Díaz‐Arencibia G. Torres‐Delgado J. G. Mendoza-Álvarez T. Prutskij F. Chavez-Ramírez E. Silva-Andrade

Year: 1996 Journal: AIP conference proceedings Vol: 378 Pages: 151-155 Publisher: American Institute of Physics

DOI: 10.1063/1.51203

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Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation P. Diaz‐Arencibia, G. Torres‐Delgado, J. Mendoza‐Alvarez, T. Prutskij, F. Chavez‐Ramírez, E. Silva‐Andrade; AlGaAs/GaAs quantum well heterostructures grown by the low temperature LPE technique. AIP Conf. Proc. 1 July 1996; 378 (1): 151–155. https://doi.org/10.1063/1.51203 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioAIP Conference Proceedings Search Advanced Search |Citation Search

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

AlGaAs/GaAs quantum well heterostructures grown by the low temperature LPE technique

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