Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures

W. D. Laidig; N. Holonyak; J. J. Coleman; F. D. Dapkus

doi:10.1007/bf02654605

ScienceGate Book Chapters

JOURNAL ARTICLE

Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures

W. D. Laidig N. Holonyak J. J. Coleman F. D. Dapkus

Year: 1982 Journal: Journal of Electronic Materials Vol: 11 (1)Pages: 1-20 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02654605

Get Full-Text PDF Get Analytical Report

Keywords:

Heterojunction Quantum well Chemical vapor deposition Band gap Materials science Impurity Condensed matter physics Solid-state physics Luminescence Photoluminescence Atmospheric temperature range Optoelectronics Chemistry Optics Physics

Metrics

Cited By

4.72

FWCI (Field Weighted Citation Impact)

Refs

0.97

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaN-based semiconductor devices and materials

Physical Sciences → Physics and Astronomy → Condensed Matter Physics

Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures

Metrics

Citation History

Topics

Related Documents

Quantum well to quantum wire crossover in AlAs/GaAs/AlAs heterostructures induced by interface roughness increase

Excitonic Emission of AlGaAs/GaAs Quantum Well Heterostructures

Impurity Induced Disorder in InGaAs/GaAs Quantum Well Heterostructures

LPE Growth of AlGaAs-GaAs Quantum Well Heterostructures

Optimization of AlAs/AlGaAs quantum well heterostructures on on-axis and misoriented GaAs (111)B