Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

V. Senthilkumar; A. Kathalingam; S. Valanarasu; V. Kannan; Jin‐Koo Rhee

doi:10.1016/j.physleta.2013.07.018

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Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

V. Senthilkumar A. Kathalingam S. Valanarasu V. Kannan Jin‐Koo Rhee

Year: 2013 Journal: Physics Letters A Vol: 377 (37)Pages: 2432-2435 Publisher: Elsevier BV

DOI: 10.1016/j.physleta.2013.07.018

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Keywords:

Nanocomposite Graphene Non-volatile memory Composite number Resistive touchscreen Oxide Optoelectronics Resistive random-access memory Materials science Voltage Spin coating Coating Nanotechnology Composite material Electrical engineering

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Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Ferroelectric and Negative Capacitance Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

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