Resistive Switching and Nonvolatile Memory in TiO2/CuPc Nanocomposite Devices

Biswanath Mukherjee

doi:10.1007/s11664-018-06891-z

ScienceGate Book Chapters

JOURNAL ARTICLE

Resistive Switching and Nonvolatile Memory in TiO2/CuPc Nanocomposite Devices

Biswanath Mukherjee

Year: 2019 Journal: Journal of Electronic Materials Vol: 48 (4)Pages: 2131-2136 Publisher: Springer Science+Business Media

DOI: 10.1007/s11664-018-06891-z

Get Full-Text PDF Get Analytical Report

Keywords:

Materials science Non-volatile memory Optoelectronics Composite number Ohmic contact Bistability Resistive random-access memory Nanocomposite Layer (electronics) Thin film Nanotechnology Voltage Electrical engineering Composite material

Metrics

Cited By

0.91

FWCI (Field Weighted Citation Impact)

Refs

0.75

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Citation History

Topics

Advanced Memory and Neural Computing

Physical Sciences → Engineering → Electrical and Electronic Engineering

Conducting polymers and applications

Physical Sciences → Materials Science → Polymers and Plastics

Transition Metal Oxide Nanomaterials

Physical Sciences → Materials Science → Polymers and Plastics

Resistive Switching and Nonvolatile Memory in TiO2/CuPc Nanocomposite Devices

Metrics

Citation History

Topics

Related Documents

Bipolar resistive switching of solution processed TiO2–graphene oxide nanocomposite for nonvolatile memory applications

Ag/a-Si:H/c-Si resistive switching nonvolatile memory devices

Resistive switching characteristics of TiO2 thin films for nonvolatile memory applications

Improved Resistive Switching Reliability in Graded NiO Multilayer for Resistive Nonvolatile Memory Devices

Wavelength dependent light tunable resistive switching graphene oxide nonvolatile memory devices