Tailoring of hole eigenenergies in strained GaAsP/AlGaAs single quantum wells grown by atmospheric pressure organometallic chemical vapor deposition

Abstract

In this letter we present experimental results demonstrating the effects of tensile strain on the ground-state hole eigenenergies of strained GaAsP/AlGaAs quantum wells (QWs) grown by organometallic chemical vapor deposition. Low-temperature photoluminescence (PL) spectra exhibit sharp, intense peaks corresponding to the n=1 heavy and light hole related QW transitions. The relative positions of the peaks depend on both the strain and the width of the QWs. In wider wells (120 Å), the lowest energy, and dominant PL peak was assigned to the light hole, and for a 80 Å well, the heavy and light hole peaks merged.