Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Daniel C. Bertolet; Jung-Kuei Hsu; F. Agahi; Kei May Lau

doi:10.1007/bf02652923

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Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Daniel C. Bertolet Jung-Kuei Hsu F. Agahi Kei May Lau

Year: 1990 Journal: Journal of Electronic Materials Vol: 19 (9)Pages: 967-974 Publisher: Springer Science+Business Media

DOI: 10.1007/bf02652923

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Keywords:

Photoluminescence Chemical vapor deposition Quantum well Dislocation Annealing (glass) Solid-state physics Materials science Group 2 organometallic chemistry Condensed matter physics Diffraction Relaxation (psychology) Chemistry Optoelectronics Optics Composite material

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Semiconductor Quantum Structures and Devices

Physical Sciences → Physics and Astronomy → Atomic and Molecular Physics, and Optics

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

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