JOURNAL ARTICLE

Critical thickness of GaAs/InGaAs and AlGaAs/GaAsP strained quantum wells grown by organometallic chemical vapor deposition

Daniel C. BertoletJung-Kuei HsuF. AgahiKei May Lau

Year: 1990 Journal:   Journal of Electronic Materials Vol: 19 (9)Pages: 967-974   Publisher: Springer Science+Business Media
Keywords:
Photoluminescence Chemical vapor deposition Quantum well Dislocation Annealing (glass) Solid-state physics Materials science Group 2 organometallic chemistry Condensed matter physics Diffraction Relaxation (psychology) Chemistry Optoelectronics Optics Composite material

Metrics

15
Cited By
0.85
FWCI (Field Weighted Citation Impact)
27
Refs
0.71
Citation Normalized Percentile
Is in top 1%
Is in top 10%

Citation History

Topics

Semiconductor Quantum Structures and Devices
Physical Sciences →  Physics and Astronomy →  Atomic and Molecular Physics, and Optics
Semiconductor materials and devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
Semiconductor Lasers and Optical Devices
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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