InAs/InP strained single quantum wells grown by atmospheric pressure organometallic vapor phase epitaxy

Abstract

Strained InAs/InP single quantum wells of nominal thickness 1–11 monolayers have been prepared using organometallic vapor phase epitaxy in an atmospheric pressure reactor. For wells of thickness 1–3 ML grown using optimal flow modulation parameters, the surface morphology was specular and narrow single-line photoluminescent emission was observed. For thicker wells, the evolution of additional PL features and the appearance of island-like features on the sample surface was attributed to the onset of three-dimensional (island) growth.