Tensile-strained GaAsP/AlGaAs quantum wells grown by low-pressure metalorganic vapor phase epitaxy

Abstract

Tensile-strained GaAs0.89P0.11/Al0.33Ga0.67As quantum wells have been grown by low-pressure metalorganic vapor phase epitaxy. The grown samples have been studied by low-temperature (6 K) and 100 K in-plane photoluminescence as well as cross-sectional polarized photoluminescence measurements. The experimental results show the coincident or reversal point of the light- and heavy-hole related transitions at the well width of 60 Å, above which the low-temperature photoluminescence is given by the transition 1e–1lh. A theoretical calculation agrees well with the experimental results.