Summary Abstract: Surface-etching kinetics of hydrogen plasma on III-V compound semiconductors

C. W. Tu; R. P. H. Chang; A. R. Schlier

doi:10.1116/1.572197

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Summary Abstract: Surface-etching kinetics of hydrogen plasma on III-V compound semiconductors

C. W. Tu R. P. H. Chang A. R. Schlier

Year: 1983 Journal: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Vol: 1 (2)Pages: 637-638 Publisher: American Institute of Physics

DOI: 10.1116/1.572197

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Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation C. W. Tu, R. P. H. Chang, A. R. Schlier; Summary Abstract: Surface‐etching kinetics of hydrogen plasma on III‐V compound semiconductors. Journal of Vacuum Science & Technology A 1 April 1983; 1 (2): 637–638. https://doi.org/10.1116/1.572197 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAVS: Science & Technology of Materials Interfaces and ProcessingJournal of Vacuum Science & Technology A Search Advanced Search |Citation Search

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Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Catalytic Processes in Materials Science

Physical Sciences → Materials Science → Materials Chemistry

Summary Abstract: Surface-etching kinetics of hydrogen plasma on III-V compound semiconductors

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