JOURNAL ARTICLE
Plasma etching of III-V compound semiconductors
Vincent M. DonnellyDaniel FlammD. E. Ibbotson
Year: 1983 Journal: Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Vol: 1 (2)Pages: 626-628 Publisher: American Institute of Physics
Abstract
Plasma etching techniques for III-V compound semiconductors are reviewed, emphasizing design considerations in the choice of gases, discharge parameters, and substrate temperature. Mechanisms are proposed for anisotropic, isotropic, and crystallographic chemical etching. Applications of plasma etching in device fabrication are given.
Keywords:
Etching (microfabrication) Isotropic etching Plasma Compound semiconductor Plasma etching Fabrication Substrate (aquarium) Materials science Semiconductor Isotropy Reactive-ion etching Anisotropy Optoelectronics Dry etching Nanotechnology Optics Geology Epitaxy Physics
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36
Cited By
4.35
FWCI (Field Weighted Citation Impact)
0
Refs
0.95
Citation Normalized Percentile
Is in top 1%
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Citation History
Topics
Semiconductor materials and devices
Physical Sciences → Engineering → Electrical and Electronic Engineering
Nanowire Synthesis and Applications
Physical Sciences → Engineering → Biomedical Engineering
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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