Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method

Tsutomu Iida; Yunosuke Makita; Shinji Kimura; Yoko Kawasumi; Akimasa Yamada; Shin‐ichiro Uekusa; Takeyo Tsukamoto

doi:10.1016/0022-0248(95)80213-v

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Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method

Tsutomu Iida Yunosuke Makita Shinji Kimura Yoko Kawasumi Akimasa Yamada Shin‐ichiro Uekusa Takeyo Tsukamoto

Year: 1995 Journal: Journal of Crystal Growth Vol: 150 Pages: 236-240 Publisher: Elsevier BV

DOI: 10.1016/0022-0248(95)80213-v

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Keywords:

Irradiation Ion Molecular beam epitaxy Doping Analytical Chemistry (journal) Chemistry Ion beam Ion beam deposition Substrate (aquarium) Sputtering Range (aeronautics) Carbon fibers Materials science Atomic physics Thin film Epitaxy Optoelectronics Nanotechnology Physics

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Metal and Thin Film Mechanics

Physical Sciences → Engineering → Mechanics of Materials

Carbon doping into GaAs using combined ion beam and molecular beam epitaxy method

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