Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Takayuki Shima; Yunosuke Makita; Shinji Kimura; Tsutomu Iida; Xiaohua Fang; De‐Sheng Jiang; Kazuhiro Kudo; Kuniaki Tanaka

doi:10.1016/s0168-583x(96)00530-7

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Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

Takayuki Shima Yunosuke Makita Shinji Kimura Tsutomu Iida Xiaohua Fang De‐Sheng Jiang Kazuhiro Kudo Kuniaki Tanaka

Year: 1996 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 120 (1-4)Pages: 293-297 Publisher: Elsevier BV

DOI: 10.1016/s0168-583x(96)00530-7

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Keywords:

Ion Molecular beam epitaxy Analytical Chemistry (journal) Irradiation Nitrogen Atomic physics Ion beam Photoluminescence Ion beam deposition Annealing (glass) Chemistry Epitaxy Exciton Impurity Doping Materials science Optoelectronics Physics Condensed matter physics

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Semiconductor materials and devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

Low energy nitrogen ion doping into GaAs using combined ion-beam and molecular-beam epitaxy method

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