Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

Yunosuke Makita; Tsutomu Iida; Shinji Kimura; Stefan Winter; Akimasa Yamada; Hajime Shibata; Akira Obara; Shigeru Niki; Yushin Tsai; Shin‐ichiro Uekusa

doi:10.1557/proc-316-965

JOURNAL ARTICLE

Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

Yunosuke Makita Tsutomu Iida Shinji Kimura Stefan Winter Akimasa Yamada Hajime Shibata Akira Obara Shigeru Niki Yushin Tsai Shin‐ichiro Uekusa

Year: 1993 Journal: MRS Proceedings Vol: 316 Publisher: Cambridge University Press

DOI: 10.1557/proc-316-965

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Keywords:

Materials science Acceptor Impurity Doping Molecular beam epitaxy Dopant Ion Carbon fibers Ion beam Analytical Chemistry (journal) Ion implantation Optoelectronics Epitaxy Nanotechnology Condensed matter physics Chemistry

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ZnO doping and properties

Physical Sciences → Materials Science → Materials Chemistry

Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Electron and X-Ray Spectroscopy Techniques

Physical Sciences → Materials Science → Surfaces, Coatings and Films

Damage-Free Ion Beam Doping of Carbon During Molecular Beam Epitaxy of GaAs

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