JOURNAL ARTICLE

Hyperthermal (30–500 eV) C+ ion-beam doping into GaAs during molecular beam epitaxy

T. IidaY. MakitaS. KimuraY. KawasumiA. YamadaT. TsukamotoShin‐ichiro UekusaKoji Matsuda

Year: 1995 Journal:   Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 96 (1-2)Pages: 331-334   Publisher: Elsevier BV
Keywords:
Molecular beam epitaxy Substrate (aquarium) Doping Ion Ion beam Ion beam deposition Materials science Analytical Chemistry (journal) Atomic physics Chemistry Epitaxy Optoelectronics Nanotechnology Physics

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2
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1.03
FWCI (Field Weighted Citation Impact)
5
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0.74
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Topics

Ion-surface interactions and analysis
Physical Sciences →  Engineering →  Computational Mechanics
Diamond and Carbon-based Materials Research
Physical Sciences →  Materials Science →  Materials Chemistry
Plasma Diagnostics and Applications
Physical Sciences →  Engineering →  Electrical and Electronic Engineering
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