Hyperthermal (30–500 eV) C+ ion-beam doping into GaAs during molecular beam epitaxy

T. Iida; Y. Makita; S. Kimura; Y. Kawasumi; A. Yamada; T. Tsukamoto; Shin‐ichiro Uekusa; Koji Matsuda

doi:10.1016/0168-583x(94)00512-5

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Hyperthermal (30–500 eV) C+ ion-beam doping into GaAs during molecular beam epitaxy

T. Iida Y. Makita S. Kimura Y. Kawasumi A. Yamada T. Tsukamoto Shin‐ichiro Uekusa Koji Matsuda

Year: 1995 Journal: Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Vol: 96 (1-2)Pages: 331-334 Publisher: Elsevier BV

DOI: 10.1016/0168-583x(94)00512-5

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Keywords:

Molecular beam epitaxy Substrate (aquarium) Doping Ion Ion beam Ion beam deposition Materials science Analytical Chemistry (journal) Atomic physics Chemistry Epitaxy Optoelectronics Nanotechnology Physics

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Ion-surface interactions and analysis

Physical Sciences → Engineering → Computational Mechanics

Diamond and Carbon-based Materials Research

Physical Sciences → Materials Science → Materials Chemistry

Plasma Diagnostics and Applications

Physical Sciences → Engineering → Electrical and Electronic Engineering

Hyperthermal (30–500 eV) C+ ion-beam doping into GaAs during molecular beam epitaxy

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