GaAs power FET's having the gate recess narrower than the gate

H. M. Macksey

doi:10.1109/edl.1986.26297

ScienceGate Book Chapters

JOURNAL ARTICLE

GaAs power FET's having the gate recess narrower than the gate

H. M. Macksey

Year: 1986 Journal: IEEE Electron Device Letters Vol: 7 (2)Pages: 69-70 Publisher: Institute of Electrical and Electronics Engineers

DOI: 10.1109/edl.1986.26297

Get Full-Text PDF Get Analytical Report

Abstract

GaAs power FET's have been fabricated with the gate recess narrower than the gate. The fabrication process for this new channel structure is described and microwave performance is presented. The best device had greater than 1 W output power per millimeter gate width at 10 GHz.

Keywords:

Optoelectronics Fabrication Gallium arsenide Materials science Electrical engineering Logic gate Microwave Field-effect transistor Power (physics) Channel (broadcasting) Transistor Engineering Physics Voltage Telecommunications

Metrics

Cited By

0.92

FWCI (Field Weighted Citation Impact)

Refs

0.77

Citation Normalized Percentile

Is in top 1%

Is in top 10%

Topics

Radio Frequency Integrated Circuit Design

Physical Sciences → Engineering → Electrical and Electronic Engineering

Semiconductor Lasers and Optical Devices

Physical Sciences → Engineering → Electrical and Electronic Engineering

GaAs power FET's having the gate recess narrower than the gate

Abstract

Metrics

Topics

Related Documents

Amorphous-Silicon gate GaAs FET's

X-and Ku-Band Performance of Submicron Gate GaAs Power FET's

GaAs dual-gate Schottky-barrier FET's for microwave frequencies

Two-dimensional simulation of MODFET and GaAs gate heterojunction FET's

GaAs FETs having high output power per unit gate width