JOURNAL ARTICLE
GaAs FETs having high output power per unit gate width
Year: 1981 Journal: IEEE Electron Device Letters Vol: 2 (6)Pages: 147-148 Publisher: Institute of Electrical and Electronics Engineers
Abstract
GaAs power FETs with output powers per unit gate width up to 1.4 W/mm have been fabricated. The factors contributing to this high output power are discussed.
Keywords:
Gallium arsenide Optoelectronics Materials science Electrical engineering Logic gate Power (physics) Unit (ring theory) Power semiconductor device Power MOSFET Transistor MOSFET Physics Engineering Voltage Mathematics
Metrics
14
Cited By
0.50
FWCI (Field Weighted Citation Impact)
5
Refs
0.68
Citation Normalized Percentile
Is in top 1%
Is in top 10%
Citation History
Topics
Radio Frequency Integrated Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
GaN-based semiconductor devices and materials
Physical Sciences → Physics and Astronomy → Condensed Matter Physics
Advancements in Semiconductor Devices and Circuit Design
Physical Sciences → Engineering → Electrical and Electronic Engineering
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