X-and Ku-Band Performance of Submicron Gate GaAs Power FET's

Abstract

A submicron gate technology has been applied to the development of large source periphery X-band power FET's. The developed devices delivered 1.0 W saturated output power at 11 GHz with a linear gain of 5.5 dB and a power added efficiency of 18.5%. At 13.6 GHz, a saturated power of 0.63 W was obtained with a linear gain of 4.5 dB. The developed devices have a cross over structure with interdigitated gate fingers. The basic pattern of the device was designed by calculating the gate-source transmission line loss at the gate fingers and the thermal resistance as a function of the spacing between each active region.