Photoluminescent and electronic properties of nanocrystalline silicon doped with gold

Abstract

Doping nanocrystalline silicon (nc-Si) films grown by laser ablation with gold leads to a considerable suppression of the nonradiative recombination of the charge carriers and excitons, an increase in the intensity and stability of the visible photoluminescence, and enhancement of the low-energy (1.5–1.6 eV) photoluminescence band. In Au-doped samples, the magnitude of the photovoltage and the rate of electron capture by traps in the film are reduced, and the density of boundary electron states and the concentration of deep electron traps at the single-crystal silicon (c-Si) substrate are decreased as well. The observed effect of doping on the photoluminescent and electronic properties of nc-Si films and nc-Si/c-Si structures is caused by the passivation of dangling Si bonds with Au and by the further oxidation of silicon at the surface of nanocrystals, which results in the formation of high-barrier SiO2 layers.