Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films

Hyun Jung Lee; Andrei Sazonov; Arokia Nathan

doi:10.1557/proc-0989-a21-07

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Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films

Hyun Jung Lee Andrei Sazonov Arokia Nathan

Year: 2007 Journal: MRS Proceedings Vol: 989 Publisher: Cambridge University Press

DOI: 10.1557/proc-0989-a21-07

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Keywords:

Materials science Plasma-enhanced chemical vapor deposition Raman spectroscopy Nanocrystalline silicon Doping Nanocrystalline material Silane Amorphous solid Boron Crystallinity Analytical Chemistry (journal) Chemical vapor deposition Thin film Conductivity Silicon Amorphous silicon Nanotechnology Optoelectronics Composite material Crystalline silicon Crystallography Optics Physical chemistry

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Thin-Film Transistor Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Silicon Nanostructures and Photoluminescence

Physical Sciences → Materials Science → Materials Chemistry

Silicon and Solar Cell Technologies

Physical Sciences → Engineering → Electrical and Electronic Engineering

Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films

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